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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD330 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max) @IC= 2.0A *Complement to Type 2SB514 APPLICATIONS *Especially suited for use in output stage of 10W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 50 50 5 2 5 1.75 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 A PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 20 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD330 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 100 A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-1 Classifications C 40-80 D 60-120 w w E 100-200 w. F sem isc IC= 1A ; VCE= 2V IC= 0.1A ; VCE= 2V IC= 0.5A; VCE= 5V .cn i 40 35 8 1.0 mA 320 MHz 160-320 isc Websitewww.iscsemi.cn 2 |
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